IXEH25N120D1
IGBT 1200V 36A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXEH25N120D1 is an NPT IGBT designed for high-voltage, high-current applications. This component features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 36A. With a maximum power dissipation of 200W, it is suitable for demanding power conversion tasks. The IGBT type is NPT, ensuring excellent switching characteristics and reduced conduction losses. Key parameters include a typical gate charge of 100 nC and a specified switching energy of 4.1mJ (on) and 1.5mJ (off) at 600V, 20A. The on-state voltage drop (Vce(on)) is 3.2V at 15V gate voltage and 25A collector current. Packaged in a TO-247AD through-hole configuration, the IXEH25N120D1 operates across a wide temperature range of -55°C to 150°C. This device finds application in areas such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 130 ns |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 4.1mJ (on), 1.5mJ (off) |
| Test Condition | 600V, 20A, 68Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 200 W |
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