IXEH25N120
IGBT 1200V 36A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXEH25N120 is a high-performance NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a robust 1200V collector-emitter breakdown voltage and a continuous collector current capability of 36A at a case temperature of 25°C. With a maximum power dissipation of 200W, the IXEH25N120 is suitable for use in power supplies, motor control, and industrial automation. The TO-247AD package offers efficient heat dissipation, and the through-hole mounting facilitates integration into various circuit designs. Key electrical characteristics include a typical gate charge of 100 nC, an on-state voltage drop (Vce(on)) of 3.2V at 15V gate-emitter voltage and 25A collector current, and switching energies of 4.1mJ (turn-on) and 1.5mJ (turn-off) under specified test conditions. The device operates reliably across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 4.1mJ (on), 1.5mJ (off) |
| Test Condition | 600V, 20A, 68Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 200 W |
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