IXDH35N60BD1
IGBT 600V 60A 250W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXDH35N60BD1 is an NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor designed for high-power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 70A. The maximum power dissipation is 250W. Key electrical parameters include a Vce(on) of 2.7V at 15V gate-emitter voltage and 35A collector current, and a gate charge of 120 nC. The device offers a reverse recovery time of 40 ns. Operating across a temperature range of -55°C to 150°C, the IXDH35N60BD1 is housed in a TO-247AD package, suitable for through-hole mounting. This IGBT is utilized in industries such as industrial power supplies, motor control, and power factor correction.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 35A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 1.6mJ (on), 800µJ (off) |
| Test Condition | 300V, 35A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 70 A |
| Power - Max | 250 W |
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