IXDH35N60B
IGBT 600V 60A 250W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXDH35N60B is a 600V NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor designed for high-power switching applications. This device features a continuous collector current capability of 60A, with a pulsed current rating of 70A. The collector-emitter saturation voltage (Vce(on)) is specified as 2.7V at 15V gate-emitter voltage and 35A collector current. With a maximum power dissipation of 250W and a low switching energy of 1.6mJ (on) and 800µJ (off) under test conditions of 300V, 35A, 10 Ohm, and 15V, the IXDH35N60B is suitable for demanding applications in industrial motor drives, power supplies, and welding equipment. The device is housed in a TO-247AD package, facilitating through-hole mounting and offering an operating temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 35A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 1.6mJ (on), 800µJ (off) |
| Test Condition | 300V, 35A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 70 A |
| Power - Max | 250 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXGA48N60A3-TRL
IXGA48N60A3 TRL
