IXDH30N120D1
IGBT 1200V 60A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXDH30N120D1 is a high-performance NPT (Non-Punch-Through) Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component offers a robust 1200V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed current capability of up to 76A. The device features a maximum power dissipation of 300W and a low on-state voltage (Vce(on)) of 2.9V at 15V Vge and 30A Ic. With a gate charge of 120 nC and a typical reverse recovery time of 40 ns, the IXDH30N120D1 is optimized for efficient switching. Its TO-247AD package facilitates through-hole mounting and operation across a wide temperature range from -55°C to 150°C. This IGBT is suitable for use in industrial motor drives, power supplies, and renewable energy systems where high voltage and current handling are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 4.6mJ (on), 3.4mJ (off) |
| Test Condition | 600V, 30A, 47Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 76 A |
| Power - Max | 300 W |
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