IXDH20N120D1
IGBT 1200V 38A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS presents the IXDH20N120D1, a Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-power applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 38 A, with a pulsed capability of 50 A. The device dissipates up to 200 W and features a low on-state voltage (Vce(on)) of 3 V at 15 V gate-emitter voltage and 20 A collector current, with a typical gate charge of 70 nC. Reverse recovery time (trr) is specified at 40 ns. Switching energy is rated at 3.1 mJ for turn-on and 2.4 mJ for turn-off, tested under 600 V, 20 A, 82 Ohm, and 15 V conditions. The IXDH20N120D1 is packaged in a TO-247AD (TO-247-3) through-hole configuration, suitable for demanding power conversion and control circuits across various industrial sectors. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 3.1mJ (on), 2.4mJ (off) |
| Test Condition | 600V, 20A, 82Ohm, 15V |
| Gate Charge | 70 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 200 W |
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