IXDH20N120
IGBT 1200V 38A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXDH20N120 is a high-performance NPT Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 38A, with a pulsed capability of 50A. Its static Vce(on) is specified at 3V maximum at 15V gate voltage and 20A collector current, with a gate charge of 70 nC. The IXDH20N120 offers switching energy figures of 3.1mJ for turn-on and 2.4mJ for turn-off under a test condition of 600V, 20A, and 82 Ohms with a 15V gate drive. With a maximum power dissipation of 200W, this IGBT is suitable for operation across a wide temperature range from -55°C to 150°C (TJ). Packaged in a TO-247AD format for through-hole mounting, it finds application in industries such as industrial motor drives, power supplies, and uninterruptible power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 3.1mJ (on), 2.4mJ (off) |
| Test Condition | 600V, 20A, 82Ohm, 15V |
| Gate Charge | 70 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 200 W |
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