IXBX75N170A
IGBT 1700V 110A 1040W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXBX75N170A, a BIMOSFET™ series IGBT, features a 1700 V collector-emitter breakdown voltage and a continuous collector current of 110 A at 42 A (Vce(on) max 6 V @ 15 V). This through-hole component, housed in a PLUS247™-3 package, offers a maximum power dissipation of 1040 W. The device exhibits a pulsed collector current of 300 A and a gate charge of 358 nC. Key switching characteristics include a turn-on delay of 26 ns and a turn-off delay of 418 ns at 25°C, with a switching energy of 3.8 mJ (off). The reverse recovery time is 360 ns. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in industrial power conversion, motor drives, and high-voltage switching systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 360 ns |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 42A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 26ns/418ns |
| Switching Energy | 3.8mJ (off) |
| Test Condition | 1360V, 42A, 1Ohm, 15V |
| Gate Charge | 358 nC |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 1040 W |
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