IXBX75N170
IGBT 1700V 200A PLUS247-3Manufacturer: IXYS
Categories: Single IGBTs
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IXYS BIMOSFET™ IXBX75N170, a high-voltage IGBT with a collector-emitter breakdown voltage of 1700 V. This component features a continuous collector current of 200 A and a pulsed collector current of 580 A, with a maximum power dissipation of 1040 W. The ON-state voltage (Vce(on)) is 3.1 V at 15 V Gate-Emitter voltage and 75 A collector current. With a gate charge of 350 nC and a reverse recovery time of 1.5 µs, this device is suitable for demanding applications. The IXBX75N170 is housed in a PLUS247™-3 package with a through-hole mounting type and operates within a temperature range of -55°C to 150°C. It finds application in high-power industrial motor drives and power supplies.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.5 µs |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 75A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 350 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 580 A |
| Power - Max | 1040 W |
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