The IXYS IXBX64N250 is a high-voltage BIMOSFET™ power transistor designed for demanding applications. This through-hole component features a collector-emitter breakdown voltage of 2500 V and a continuous collector current rating of 156 A, with a pulsed current capability of 600 A. The device offers a maximum power dissipation of 735 W and a low on-state voltage (Vce(on)) of 3 V at 15 V gate-emitter voltage and 64 A collector current. With a gate charge of 400 nC, typical turn-on delay is 49 ns and turn-off delay is 232 ns at 25°C, tested under 1250 V, 128 A, 1 Ohm, and 15 V conditions. The IXBX64N250 is housed in the PLUS247™-3 package and operates across a temperature range of -55°C to 150°C. This component is suitable for use in high-voltage power conversion systems and industrial motor drives.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 160 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 64A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 49ns/232ns |
| Switching Energy | - |
| Test Condition | 1250V, 128A, 1Ohm, 15V |
| Gate Charge | 400 nC |
| Current - Collector (Ic) (Max) | 156 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 735 W |
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