IXBX55N300
IGBT 3000V 130A 625W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXBX55N300 is a high-voltage, high-power BIMOSFET™ IGBT designed for demanding applications. This device features a 3000V collector-emitter breakdown voltage and a continuous collector current rating of 130A, with a pulsed capability of 600A. The IXBX55N300 offers a low on-state voltage of 3.2V at 15V gate drive and 55A collector current, contributing to efficient power dissipation with a maximum power rating of 625W. Its fast switching characteristics are complemented by a typical gate charge of 335 nC and a reverse recovery time of 1.9 µs. Packaged in a robust PLUS247™-3 (TO-247-3 Variant) through-hole configuration, this IGBT is suitable for use in high-voltage power conversion systems, industrial motor drives, and renewable energy applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.9 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 335 nC |
| Current - Collector (Ic) (Max) | 130 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 625 W |
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