IXBX50N360HV
IGBT 3600V 125A TO247PLUS-HVManufacturer: IXYS
Categories: Single IGBTs
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IXYS BIMOSFET™ IXBX50N360HV is a high-voltage IGBT designed for demanding power applications. This discrete semiconductor device features a maximum collector-emitter voltage of 3600V and a continuous collector current of 125A, with a pulsed collector current capability of 420A. The device dissipates a maximum power of 660W and offers a low on-state voltage (Vce(on)) of 2.9V at 15V gate-emitter voltage and 50A collector current. Typical on-time and off-time are 46ns and 205ns respectively, with a reverse recovery time of 1.7µs, all measured under specific test conditions of 960V, 50A, 5 Ohm, and 15V gate drive. The IXBX50N360HV is housed in a TO-247PLUS-HV package for through-hole mounting, with an operating temperature range from -55°C to 150°C. This component is suitable for use in high-voltage power supplies, industrial motor drives, and renewable energy systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.7 µs |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 50A |
| Supplier Device Package | TO-247PLUS-HV |
| IGBT Type | - |
| Td (on/off) @ 25°C | 46ns/205ns |
| Switching Energy | - |
| Test Condition | 960V, 50A, 5Ohm, 15V |
| Gate Charge | 210 nC |
| Current - Collector (Ic) (Max) | 125 A |
| Voltage - Collector Emitter Breakdown (Max) | 3600 V |
| Current - Collector Pulsed (Icm) | 420 A |
| Power - Max | 660 W |
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