IXBX25N250
IGBT 2500V 55A PLUS247-3Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBX25N250 is a high-voltage BIMOSFET™ IGBT designed for demanding power applications. This device features a robust 2500 V collector-emitter breakdown voltage and a continuous collector current capability of 55 A, with a pulsed current rating of 180 A. The IXBX25N250 offers a maximum power dissipation of 300 W and boasts a low on-state voltage of 3.3 V at 15 V gate-emitter voltage and 25 A collector current. With a typical gate charge of 103 nC and a reverse recovery time of 1.6 µs, it is suitable for applications requiring efficient switching. The component is housed in a PLUS247™-3 through-hole package, ensuring reliable mounting and thermal performance across an operating temperature range of -55°C to 150°C. This IGBT is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.6 µs |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 25A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 103 nC |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 300 W |
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