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IXBT6N170

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IXBT6N170

IGBT 1700V 12A TO268AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXBT6N170 is a high-performance BIMOSFET™ IGBT designed for demanding applications. This component features a 1700V collector-emitter breakdown voltage and a continuous collector current rating of 12A, with a pulsed capability of 36A. The device offers low on-state voltage (Vce(on)) of 3.4V at 15V gate-emitter voltage and 6A collector current, contributing to efficient power dissipation. With a maximum power rating of 75W and a switching characteristic reverse recovery time of 1.08 µs, the IXBT6N170 is well-suited for power factor correction, industrial motor drives, and high-voltage power supplies. Packaged in a TO-268AA surface-mount configuration, it operates across a temperature range of -55°C to 150°C.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)1.08 µs
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 6A
Supplier Device PackageTO-268AA
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge17 nC
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)36 A
Power - Max75 W

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