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IXBT42N300HV

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IXBT42N300HV

IGBT 3000V 104A TO268HV

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXBT42N300HV is a high-voltage BIMOSFET™ IGBT designed for demanding power applications. This device features a 3000V collector-emitter breakdown voltage and a continuous collector current rating of 104A, with a pulsed capability of 400A. With a maximum power dissipation of 500W and a low on-state voltage of 3V at 15V gate-emitter voltage and 42A collector current, it offers efficient power switching. The TO-268HV package facilitates surface mounting for streamlined board design. Key performance parameters include a gate charge of 200 nC and a reverse recovery time of 1.7 µs. Typical applications span high-voltage power supplies, industrial motor drives, and renewable energy systems.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)1.7 µs
Vce(on) (Max) @ Vge, Ic3V @ 15V, 42A
Supplier Device PackageTO-268HV (IXBT)
IGBT Type-
Td (on/off) @ 25°C72ns/445ns
Switching Energy-
Test Condition1500V, 42A, 20Ohm, 15V
Gate Charge200 nC
Current - Collector (Ic) (Max)104 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Current - Collector Pulsed (Icm)400 A
Power - Max500 W

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