IXBT42N170A
IGBT 1700V 42A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBT42N170A is a BIMOSFET™ IGBT designed for high-voltage applications. This device features a 1700V collector-emitter breakdown voltage and a continuous collector current rating of 42A, with a pulsed capability of 265A. The IXBT42N170A offers a maximum power dissipation of 357W and a low on-state voltage of 6V at 15V gate-emitter voltage and 21A collector current. Switching characteristics include a typical turn-on delay of 19ns and turn-off delay of 200ns at 25°C, with a 330ns reverse recovery time. The device is housed in a TO-268AA surface mount package, suitable for demanding thermal management. It finds application in power conversion systems, industrial motor drives, and renewable energy systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 330 ns |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 21A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 19ns/200ns |
| Switching Energy | 3.43mJ (on), 430µJ (off) |
| Test Condition | 850V, 21A, 1Ohm, 15V |
| Gate Charge | 188 nC |
| Current - Collector (Ic) (Max) | 42 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 265 A |
| Power - Max | 357 W |
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