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IXBT42N170-TRL

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IXBT42N170-TRL

IGBT 1700V 80A TO268

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXBT42N170-TRL is a high-voltage IXBT Series BIMOSFET™ device designed for demanding power applications. This IGBT features a 1700V collector-emitter breakdown voltage and a continuous collector current rating of 80A, with a pulsed current capability of up to 300A. With a maximum power dissipation of 360W, it is suitable for surface mount installations within a TO-268 package. The device exhibits a typical on-state voltage of 2.8V at 15V gate-emitter voltage and 42A collector current. Switching characteristics include a gate charge of 188nC and turn-on/turn-off times of 37ns/340ns respectively, at 850V, 42A, 10 Ohm, 15V. This component is commonly utilized in industrial motor drives, welding equipment, and power supplies. Supplied in Tape & Reel packaging.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 42A
Supplier Device PackageTO-268
IGBT Type-
Td (on/off) @ 25°C37ns/340ns
Switching Energy-
Test Condition850V, 42A, 10Ohm, 15V
Gate Charge188 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)300 A
Power - Max360 W

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