IXBT42N170
IGBT 1700V 80A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBT42N170 is a high-voltage, high-current BIMOSFET™ IGBT designed for demanding power applications. This device features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 300 A. The IXYS IGBT offers a low on-state voltage (Vce(on)) of 2.8 V at 15 V gate-emitter voltage and 42 A collector current, contributing to efficient operation. With a maximum power dissipation of 360 W and a gate charge of 188 nC, it is suitable for applications requiring robust switching performance. The TO-268AA package enables surface mounting for streamlined assembly. This component finds utility in industries such as industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.32 µs |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 42A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 188 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 360 W |
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