IXBT32N300HV
IGBT 3000V 80A TO268HVManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXBT32N300HV is a high-voltage BIMOSFET™ series IGBT designed for demanding applications. This surface-mount device, housed in a TO-268HV package, features a 3000V collector-emitter breakdown voltage and an 80A continuous collector current. It offers a pulsed collector current of 280A and dissipates up to 400W. Key parameters include a 3.2V maximum on-state voltage at 15V gate-emitter voltage and 32A collector current, along with a gate charge of 142nC. Typical turn-on and turn-off delays are 50ns and 160ns, respectively, at 25°C. The device operates across a temperature range of -55°C to 150°C. This component is suitable for use in high-power switching applications across various industrial sectors.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1500 ns |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 32A |
| Supplier Device Package | TO-268HV (IXBT) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/160ns |
| Switching Energy | - |
| Test Condition | 1250V, 32A, 2Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 280 A |
| Power - Max | 400 W |
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