IXBT2N250-TR
IGBT 2500V 5A TO268Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBT2N250-TR is a BIMOSFET™ series IGBT designed for high-voltage applications. This component features a 2500 V collector-emitter breakdown voltage and a continuous collector current (Ic) of 5 A, with a pulsed capability (Icm) of 13 A. It offers a low on-state voltage (Vce(on)) of 3.5 V at 15 V gate-emitter voltage and 2 A collector current. With a gate charge of 10.6 nC, it enables efficient switching, characterized by typical turn-on delay (Td(on)) of 30 ns and turn-off delay (Td(off)) of 70 ns at 25°C. The device dissipates a maximum power of 32 W and operates within a temperature range of -55°C to 150°C. The IXBT2N250-TR is supplied in a TO-268 package, suitable for surface mounting and provided in Tape & Reel (TR) packaging. This IGBT finds utility in power conversion systems and industrial automation.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 920 ns |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 2A |
| Supplier Device Package | TO-268 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/70ns |
| Switching Energy | - |
| Test Condition | 2000V, 2A, 47Ohm, 15V |
| Gate Charge | 10.6 nC |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 13 A |
| Power - Max | 32 W |
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