The IXYS IXBT2N250 is a BIMOSFET™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This surface mount device, packaged in a TO-268AA, offers a collector-emitter breakdown voltage of 2500 V and a continuous collector current of 5 A. With a maximum power dissipation of 32 W, it features a gate charge of 10.6 nC and a Vce(on) of 3.5 V at 15 V gate-source voltage and 2 A collector current. The device operates within an ambient temperature range of -55°C to 150°C. Applications for this component include industrial motor drives and high-voltage power supplies.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 920 ns |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 2A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 10.6 nC |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 13 A |
| Power - Max | 32 W |
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