IXBT24N170
IGBT 1700V 60A TO268AAManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXBT24N170 is a high-voltage, high-current BIMOSFET™ device designed for demanding power applications. This single IGBT offers a 1700 V collector-emitter breakdown voltage and a continuous collector current capability of 60 A, with a pulsed current rating of 230 A. The device dissipates up to 250 W and features a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate voltage and 24 A collector current. Its input type is standard, and it boasts a gate charge of 140 nC. The IXBT24N170 utilizes a TO-268AA package for surface mounting, providing efficient thermal management. Operating across a wide temperature range of -55°C to 150°C (TJ), this IGBT is well-suited for applications in industrial motor drives, renewable energy systems, and high-voltage power supplies. The reverse recovery time (trr) is rated at 1.06 µs.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.06 µs |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 24A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 230 A |
| Power - Max | 250 W |
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