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IXBT20N360HV

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IXBT20N360HV

IGBT 3600V 70A TO268AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXBT20N360HV is a 3600V, 70A BIMOSFET™ series IGBT designed for high-voltage applications. This surface-mount device features a TO-268AA package, offering a maximum continuous collector current (Ic) of 70A and a pulsed collector current (Icm) of 220A. With a power dissipation of 430W, it is suitable for demanding power conversion tasks. The device exhibits a Vce(on) of 3.4V at 15V gate-emitter voltage and 20A collector current. Key switching characteristics include a gate charge of 110 nC, turn-on delay (Td(on)) of 18ns, and turn-off delay (Td(off)) of 238ns at 25°C. Switching energy is specified at 15.5mJ (on) and 4.3mJ (off) under test conditions of 1500V, 20A, 10 Ohm, and 15V. The IXBT20N360HV operates across a temperature range of -55°C to 150°C (TJ). This component finds utility in industries such as industrial power supplies, renewable energy systems, and electric vehicle powertrains.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)1.7 µs
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
Supplier Device PackageTO-268AA
IGBT Type-
Td (on/off) @ 25°C18ns/238ns
Switching Energy15.5mJ (on), 4.3mJ (off)
Test Condition1500V, 20A, 10Ohm, 15V
Gate Charge110 nC
Current - Collector (Ic) (Max)70 A
Voltage - Collector Emitter Breakdown (Max)3600 V
Current - Collector Pulsed (Icm)220 A
Power - Max430 W

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