IXBT20N300HV
IGBT 3000V 50A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBT20N300HV is a high-voltage BIMOSFET™ IGBT with a collector-emitter breakdown voltage of 3000 V. This device features a continuous collector current capability of 50 A, with a pulsed capability of 140 A. The IGBT type is standard, and it operates with a gate charge of 105 nC. The on-state voltage (Vce(on)) is specified as 3.2 V at 15 V gate-emitter voltage and 20 A collector current. This component is rated for a maximum power dissipation of 250 W and has a reverse recovery time (trr) of 1.35 µs. The IXYS IXBT20N300HV is housed in a TO-268AA (TO-268-3, D3PAK) surface mount package. It is designed for operation across a temperature range of -55°C to 150°C (TJ). This device is suitable for applications requiring robust high-voltage switching, such as in industrial power supplies and motor control systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 47 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.35 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 20A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 250 W |
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