IXBT16N170AHV
IGBT 1700V 16A TO268HVManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBT16N170AHV is a BIMOSFET™ series IGBT designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 1700V and a continuous collector current rating of 16A, with a pulsed current capability of 40A. Featuring a low on-state voltage of 6V at 15V gate-emitter voltage and 10A collector current, and a switching energy of 2.5mJ (off) under test conditions of 1360V, 10A, 10 Ohm, and 15V. The device has a gate charge of 65 nC and a reverse recovery time of 25 ns. Packaged in a TO-268HV (IXBT) surface mount configuration, it operates within an ambient temperature range of -55°C to 150°C. This IGBT is suitable for use in power supply, industrial motor control, and renewable energy systems. The maximum power dissipation is 150W.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 10A |
| Supplier Device Package | TO-268HV (IXBT) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/250ns |
| Switching Energy | 2.5mJ (off) |
| Test Condition | 1360V, 10A, 10Ohm, 15V |
| Gate Charge | 65 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 150 W |
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