IXBT16N170A
IGBT 1700V 16A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBT16N170A is a BIMOSFET™ series IGBT designed for high-voltage applications. This single IGBT features a 1700 V collector-emitter breakdown voltage and a continuous collector current of 16 A, with a pulsed capability of 40 A. It offers a maximum power dissipation of 150 W. The device is presented in a TO-268AA surface mount package, suitable for demanding thermal management. With a typical gate charge of 65 nC, it exhibits switching times of 15 ns turn-on and 160 ns turn-off at 25°C, with a reverse recovery time of 360 ns. The on-state voltage (Vce(on)) is rated at 6 V for 15 V gate-source voltage and 10 A collector current. This component is utilized in power conversion systems, industrial motor drives, and electric vehicle powertrains.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 360 ns |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 10A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/160ns |
| Switching Energy | 1.2mJ (off) |
| Test Condition | 1360V, 10A, 10Ohm, 15V |
| Gate Charge | 65 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 150 W |
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