IXBT14N300HV
IGBT 3000V 38A TO268HVManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBT14N300HV is a high-voltage BIMOSFET™ insulated gate bipolar transistor designed for demanding power applications. This component features a 3000V collector-emitter breakdown voltage and a continuous collector current capability of 38A, with a pulsed capability of 120A. The TO-268HV (IXBT) package facilitates efficient surface mounting. Key electrical characteristics include a typical gate charge of 62 nC and a collector-emitter saturation voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 14A collector current. The device operates within a temperature range of -55°C to 150°C (TJ) and offers a reverse recovery time (trr) of 1.4 µs. The IXBT14N300HV is suitable for power factor correction, induction heating, and high-voltage power supplies.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.4 µs |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 14A |
| Supplier Device Package | TO-268HV (IXBT) |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | 960V, 14A, 20Ohm, 15V |
| Gate Charge | 62 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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