IXBT12N300HV
IGBT 3000V 30A TO268HVManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXBT12N300HV is a high-voltage BIMOSFET™ IGBT designed for power switching applications. This surface mount device, housed in a TO-268HV package, offers a 3000V collector-emitter breakdown voltage and a continuous collector current capability of 30A, with a pulsed rating of 100A. It features a maximum power dissipation of 160W and a low on-state voltage of 3.2V at 15V gate-emitter voltage and 12A collector current, under test conditions of 1250V, 12A, 10 Ohms. Typical turn-on and turn-off delays at 25°C are 64ns and 180ns respectively, with a reverse recovery time of 1.4µs. The gate charge is rated at 62nC. This component is suitable for demanding applications in industries such as industrial power supplies, motor drives, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.4 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 12A |
| Supplier Device Package | TO-268HV (IXBT) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 64ns/180ns |
| Switching Energy | - |
| Test Condition | 1250V, 12A, 10Ohm, 15V |
| Gate Charge | 62 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 160 W |
Request a Quote
Clients Also Buy
IXBH42N170
IGBT 1700V 80A TO247AD
IXBT2N250
IGBT 2500V 5A TO268AA
IXBF20N360
IGBT 3600V 45A ISOPLUS I4PAK
