IXBK75N170
IGBT 1700V 200A TO264AAManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXBK75N170, a high-performance BIMOSFET™ device, offers a robust 1700V collector-emitter breakdown voltage and a continuous collector current capability of 200A (Icm 580A pulsed). This IGBT features a maximum power dissipation of 1040W and a low on-state voltage (Vce(on)) of 3.1V at 15V gate drive and 75A collector current. Designed for demanding applications, it operates within an extended temperature range of -55°C to 150°C. The IXBK75N170 is housed in a TO-264AA package, facilitating through-hole mounting. Its typical applications span industrial motor drives, power supplies, and renewable energy systems. This device is supplied in tube packaging.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.5 µs |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 75A |
| Supplier Device Package | TO-264AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 350 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 580 A |
| Power - Max | 1040 W |
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