IXBK55N300
IGBT 3000V 130A 625W TO264Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXBK55N300 is a high-voltage BIMOSFET™ IGBT device designed for demanding power switching applications. This component features a 3000 V collector-emitter breakdown voltage and a continuous collector current rating of 130 A, with a pulsed capability of 600 A. With a maximum power dissipation of 625 W, the IXBK55N300 is suitable for use in high-power conversion systems, electric vehicle powertrains, and industrial motor drives. The device is housed in a TO-264AA package for through-hole mounting and offers a low on-state voltage of 3.2 V at 15 V gate-emitter voltage and 55 A collector current. Its operating temperature range is -55°C to 150°C. The IXBK55N300 exhibits a reverse recovery time of 1.9 µs and a gate charge of 335 nC.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.9 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A |
| Supplier Device Package | TO-264AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 335 nC |
| Current - Collector (Ic) (Max) | 130 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 625 W |
Request a Quote
Clients Also Buy
IXBH42N170
IGBT 1700V 80A TO247AD
IXBT2N250
IGBT 2500V 5A TO268AA
IXBF20N360
IGBT 3600V 45A ISOPLUS I4PAK
