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IXBH6N170

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IXBH6N170

IGBT 1700V 12A TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXBH6N170, a BIMOSFET™ series device, is a high-voltage IGBT designed for robust power switching applications. This component features a 1700 V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) of 12 A, with a pulsed capability of 36 A (Icm). The IGBT exhibits a low on-state voltage (Vce(on)) of 3.4 V at 15 V gate-emitter voltage and 6 A collector current. With a maximum power dissipation of 75 W and a -55°C to 150°C operating temperature range, it is suitable for demanding environments. The device includes a reverse recovery time (trr) of 1.08 µs. Packaged in a TO-247AD with a standard input type, the IXBH6N170 is ideal for use in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)1.08 µs
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 6A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge17 nC
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)36 A
Power - Max75 W

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