IXBH42N300HV
DISC IGBT BIMSFT-VERYHIVOLT TO-2Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBH42N300HV is a discrete IGBT from the BIMOSFET™ series, designed for high-voltage applications. This through-hole component features a collector-emitter breakdown voltage of 3000 V and a continuous collector current of 104 A, with a pulsed current capability of 400 A. Its maximum power dissipation is 500 W, and it operates within a temperature range of -55°C to 150°C. The IGBT has a typical gate charge of 200 nC and a reverse recovery time of 1.7 µs. The on-state voltage (Vce(on)) is rated at 3V for a gate-emitter voltage (Vge) of 15V and collector current (Ic) of 42A. Packaged in a TO-247HV variant, this device is suitable for power conversion and motor drive applications in industrial and renewable energy sectors.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.7 µs |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 42A |
| Supplier Device Package | TO-247HV |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 104 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 500 W |
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