IXBH42N250
BIMOSFET TRANS 2500V 42A TO-247AManufacturer: IXYS
Categories: Single IGBTs
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IXYS BIMOSFET™ IXBH42N250 is a high-voltage, high-current power transistor designed for demanding applications. This TO-247AD packaged device features a 2500V collector-emitter breakdown voltage and a continuous collector current rating of 104A, with a pulsed current capability of 400A. The BIMOSFET technology offers a robust solution for power switching. Key electrical parameters include a maximum on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 42A collector current. Typical turn-on and turn-off delays are 72ns and 445ns respectively, measured at 1250V, 42A, 20 Ohm, and 15V. The device offers a reverse recovery time of 1.7µs and a gate charge of 200nC. With a maximum power dissipation of 500W, this component is suitable for use in industrial power supplies, motor drives, and high-voltage conversion systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.7 µs |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 42A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 72ns/445ns |
| Switching Energy | - |
| Test Condition | 1250V, 42A, 20Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 104 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 500 W |
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