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IXBH42N170A

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IXBH42N170A

IGBT 1700V 42A TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXBH42N170A, a BIMOSFET™ series IGBT, features a 1700V collector-emitter breakdown voltage and a continuous collector current of 42A. This device offers a pulsed collector current of 265A and a maximum power dissipation of 357W. The TO-247AD package facilitates through-hole mounting. Key performance characteristics include a gate charge of 188 nC, an on-state voltage of 6V at 15V gate-emitter voltage and 21A collector current, and a reverse recovery time of 330 ns. Switching energy is specified at 3.43 mJ (on) and 430 µJ (off) under test conditions of 850V, 21A, 1 Ohm, and 15V. The operating temperature range is from -55°C to 150°C. This component is suitable for applications in high-power switching and motor control systems.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)330 ns
Vce(on) (Max) @ Vge, Ic6V @ 15V, 21A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C19ns/200ns
Switching Energy3.43mJ (on), 430µJ (off)
Test Condition850V, 21A, 1Ohm, 15V
Gate Charge188 nC
Current - Collector (Ic) (Max)42 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)265 A
Power - Max357 W

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