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IXBH32N300HV

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IXBH32N300HV

DISC IGBT BIMSFT-VERYHIVOLT TO-2

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXBH32N300HV is a 3000V, 80A BIMOSFET™ series device designed for high-voltage applications. This IGBT features a high collector current capability of 80A, with a pulsed current rating of 280A, and a maximum power dissipation of 400W. The device exhibits low on-state voltage of 3.2V at 15V gate-emitter voltage and 32A collector current. With a gate charge of 142nC, it is suitable for demanding power switching in industrial power supplies, electric vehicle charging, and renewable energy systems. The TO-247HV package with through-hole mounting ensures robust thermal performance and ease of integration into existing designs. Operating temperature range is from -55°C to 150°C.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 32A
Supplier Device PackageTO-247HV
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge142 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Current - Collector Pulsed (Icm)280 A
Power - Max400 W

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