IXBH32N300HV
DISC IGBT BIMSFT-VERYHIVOLT TO-2Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXBH32N300HV is a 3000V, 80A BIMOSFET™ series device designed for high-voltage applications. This IGBT features a high collector current capability of 80A, with a pulsed current rating of 280A, and a maximum power dissipation of 400W. The device exhibits low on-state voltage of 3.2V at 15V gate-emitter voltage and 32A collector current. With a gate charge of 142nC, it is suitable for demanding power switching in industrial power supplies, electric vehicle charging, and renewable energy systems. The TO-247HV package with through-hole mounting ensures robust thermal performance and ease of integration into existing designs. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 32A |
| Supplier Device Package | TO-247HV |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 280 A |
| Power - Max | 400 W |