IXBH32N300
IGBT 3000V 80A 400W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXBH32N300 is a high-performance BIMOSFET™ device offering a 3000V collector-emitter breakdown voltage and a continuous collector current of 80A. This through-hole TO-247AD package IGBT features a maximum power dissipation of 400W, making it suitable for demanding applications. With a pulsed collector current capability of 280A and a typical Vce(on) of 3.2V at 15V gate-emitter voltage and 32A collector current, it delivers efficient power switching. The IXBH32N300 exhibits a gate charge of 142 nC and a reverse recovery time of 1.5 µs. Operating across a wide temperature range of -55°C to 150°C, this component is utilized in high-voltage power conversion, industrial motor drives, and renewable energy systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.5 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 32A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 280 A |
| Power - Max | 400 W |
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