IXBH24N170
IGBT 1700V 60A TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBH24N170 is a high-performance BIMOSFET™ IGBT designed for demanding applications. This device features a robust 1700V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 230A (Icm). With a maximum power dissipation of 250W, it is suitable for high-power switching circuits. The Vce(on) is specified at 2.5V with a gate drive of 15V at 24A. The standard input type and TO-247AD package with through-hole mounting facilitate integration into existing designs. The IXYS IXBH24N170 is utilized in industries such as industrial automation, power supplies, and renewable energy systems. It offers a gate charge of 140 nC and a reverse recovery time (trr) of 1.06 µs. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.06 µs |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 24A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 230 A |
| Power - Max | 250 W |
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