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IXBH20N300

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IXBH20N300

IGBT 3000V 50A TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXBH20N300 is a high-voltage BIMOSFET™ IGBT designed for demanding applications. This single IGBT features a collector-emitter breakdown voltage of 3000 V and a continuous collector current capability of 50 A, with a pulsed current rating of 140 A. Its robust TO-247AD package allows for efficient heat dissipation, supporting a maximum power dissipation of 250 W. With a gate charge of 105 nC and a Vce(on) of 3.2V at 15V/20A, it offers optimized switching characteristics. The component operates reliably across a wide temperature range from -55°C to 150°C. This device is suitable for applications in high-voltage power conversion, industrial motor drives, and renewable energy systems.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)1.35 µs
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge105 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Current - Collector Pulsed (Icm)140 A
Power - Max250 W

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