IXBH16N170
IGBT 1700V 40A TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBH16N170 is a high-voltage, high-current BIMOSFET™ single IGBT designed for demanding power applications. This component features a 1700V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic) capability of 40A, with a pulsed current (Icm) rating of 120A. The device dissipates up to 250W, and exhibits a typical on-state voltage (Vce(on)) of 3.3V at 15V gate-emitter voltage and 16A collector current. With a gate charge of 72 nC and a reverse recovery time (trr) of 1.32 µs, it offers efficient switching characteristics. The IXBH16N170 is housed in a TO-247AD package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C. This device finds application in industries such as industrial motor control, renewable energy systems, and high-voltage power supplies.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.32 µs |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 16A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 72 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 250 W |
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