IXBH14N300HV
DISC IGBT BIMSFT VERYHIVOLT TO-2Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXBH14N300HV is a high-voltage BIMOSFET™ series insulated gate bipolar transistor (IGBT) designed for demanding power applications. This component features a 3000 V collector-emitter breakdown voltage (Vcesat) and a continuous collector current (Ic) of 38 A, with a pulsed capability of 120 A. The device exhibits a maximum power dissipation of 200 W and a collector-emitter saturation voltage (Vce(on)) of 2.7 V at 15 V gate-emitter voltage and 14 A collector current. With a gate charge of 62 nC and a reverse recovery time (trr) of 1.4 µs, it facilitates efficient switching. The IXBH14N300HV is housed in a TO-247HV (IXBH) package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C. This IGBT is utilized in power supply, motor control, and industrial automation systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.4 µs |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 14A |
| Supplier Device Package | TO-247HV (IXBH) |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 62 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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