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IXBH12N300

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IXBH12N300

IGBT 3000V 30A 160W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXBH12N300 is a high-voltage BIMOSFET™ series N-channel IGBT with a 3000 V collector-emitter breakdown voltage. This component offers a continuous collector current of 30 A and a pulsed collector current of 100 A, with a maximum power dissipation of 160 W. The device features a low saturation voltage of 3.2V at 15V gate-emitter voltage and 12A collector current. With a gate charge of 62 nC and a reverse recovery time of 1.4 µs, it is suitable for high-power switching applications. The IXBH12N300 is packaged in a TO-247-3 through-hole format, designed for robust thermal management. Its operating temperature range is -55°C to 150°C. This IGBT is commonly utilized in industrial power factor correction, electric vehicle charging, and uninterruptible power supplies.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)1.4 µs
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 12A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge62 nC
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Current - Collector Pulsed (Icm)100 A
Power - Max160 W

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