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IXBH10N170

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IXBH10N170

IGBT 1700V 20A 140W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXBH10N170 is a high-voltage BIMOSFET™ IGBT designed for demanding power applications. This single IGBT features a 1700 V collector-emitter breakdown voltage with a continuous collector current capability of 20 A (40 A pulsed). The device boasts a maximum power dissipation of 140 W and a low collector-emitter saturation voltage of 3.8 V at 15 V gate-emitter voltage and 10 A collector current. Switching characteristics include a typical turn-on delay of 35 ns and turn-off delay of 500 ns at 25°C, with a switching energy of 6 mJ (off) under test conditions of 1360 V, 10 A, 56 Ohm, and 15 V. The TO-247AD package facilitates through-hole mounting and offers a wide operating temperature range from -55°C to 150°C. This component is commonly utilized in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)360 ns
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 10A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C35ns/500ns
Switching Energy6mJ (off)
Test Condition1360V, 10A, 56Ohm, 15V
Gate Charge30 nC
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)40 A
Power - Max140 W

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