IXBF9N160G
IGBT 1600V 7A 70W I4PACManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBF9N160G is a robust BIMOSFET™ IGBT designed for high-voltage applications. This component features a 1600V collector-emitter breakdown voltage and a continuous collector current rating of 7A, with a maximum power dissipation of 70W. The device exhibits a typical on-state voltage (Vce(on)) of 7V at 15V gate-emitter voltage and 5A collector current, under test conditions of 960V, 5A, 27 Ohm, and 10V. With a gate charge of 34 nC, the IXBF9N160G is suitable for power conversion systems, industrial motor drives, and renewable energy solutions. It is packaged in the ISOPLUS i4-PAC™ (i4-Pac™-5) through-hole package, offering thermal performance across an operating temperature range of -55°C to 150°C (TJ).
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 7V @ 15V, 5A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | 960V, 5A, 27Ohm, 10V |
| Gate Charge | 34 nC |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 1600 V |
| Power - Max | 70 W |
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