IXBF55N300
DISC IGBT BIMSFT-VERYHIVOLT I4-PManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBF55N300 is a high-voltage BIMOSFET™ device featuring a 3000 V collector-emitter breakdown voltage. This through-hole mounted IGBT, part of the ISOPLUS i4-PAC™ family, offers a continuous collector current of 86 A and a pulsed current capability of 600 A. With a maximum power dissipation of 357 W and a Vce(on) of 3.2V at 15V/55A, it is suitable for demanding applications. The device exhibits a gate charge of 335 nC and a reverse recovery time of 1.9 µs. Operating temperature ranges from -55°C to 150°C. This component finds application in high-power switching, power factor correction, and uninterruptible power supplies.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.9 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 335 nC |
| Current - Collector (Ic) (Max) | 86 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 357 W |
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