IXBF32N300
IGBT 3000V 40A ISOPLUSI4Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBF32N300 is a high-voltage BIMOSFET™ series insulated-gate bipolar transistor (IGBT) designed for demanding applications. This through-hole component offers a 3000V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 250A. It features a low on-state voltage of 3.2V at 15V gate-emitter voltage and 32A collector current, contributing to efficient power handling of up to 160W. The IXYS IXBF32N300 is housed in an ISOPLUS i4-PAC™ package, providing robust thermal performance and electrical isolation. Its wide operating temperature range of -55°C to 150°C makes it suitable for industrial power conversion, motor drives, and high-voltage switching applications.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.5 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 32A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 250 A |
| Power - Max | 160 W |
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