IXBF20N300
IGBT 3000V 34A ISOPLUSI4Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBF20N300 is a high-voltage BIMOSFET™ IGBT designed for demanding power applications. This component features a 3000V collector-emitter breakdown voltage and a continuous collector current rating of 34A, with a pulsed capability of up to 150A. The device offers a low on-state voltage of 3.2V at 15V gate-emitter voltage and 20A collector current, contributing to efficient power conversion. With a maximum power dissipation of 150W and a gate charge of 105 nC, it is suitable for high-frequency switching. The IXBF20N300 utilizes the ISOPLUS i4-PAC™ package for through-hole mounting, facilitating thermal management and ease of system integration. Its operating temperature range of -55°C to 150°C (TJ) ensures reliability across various environments. This IGBT is commonly employed in industrial power supplies, motor drives, and high-voltage conversion systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.35 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 20A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 150 W |
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