IXBF12N300
IGBT 3000V 26A 125W ISOPLUSI4Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXBF12N300 is a high-voltage BIMOSFET™ series IGBT designed for demanding power applications. This through-hole component features a 3000V collector-emitter breakdown voltage and a continuous collector current rating of 26A, with a pulsed capability of 98A. The device dissipates a maximum power of 125W and exhibits a Vce(on) of 3.2V at 15V gate-source voltage and 12A collector current. With a typical gate charge of 62 nC and a reverse recovery time of 1.4 µs, the IXBF12N300 is suitable for high-frequency switching. It operates across a wide temperature range of -55°C to 150°C. The ISOPLUS i4-PAC™ package offers robust thermal performance and isolation. This IGBT is commonly utilized in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.4 µs |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 12A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 62 nC |
| Current - Collector (Ic) (Max) | 26 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 98 A |
| Power - Max | 125 W |
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