IXBA16N170AHV-TRL
DISC IGBT BIMOSFET-HIGH VOLT TO-Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBA16N170AHV-TRL is a high-voltage BIMOSFET™ single IGBT featuring a 1700V collector-emitter breakdown voltage and a continuous collector current of 16A. This device offers a low on-state voltage of 6V at 15V gate-emitter voltage and 10A collector current, with a maximum pulsed collector current of 40A. Designed for efficient switching, it exhibits a typical turn-on delay of 15ns and turn-off delay of 160ns at 25°C, with a reverse recovery time of 360ns. The device supports a maximum power dissipation of 150W and has a gate charge of 65nC. Packaged in a TO-263HV surface mount configuration, it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in high-voltage power conversion, industrial motor drives, and power factor correction circuits.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 360 ns |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 10A |
| Supplier Device Package | TO-263HV |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/160ns |
| Switching Energy | 1.2mJ (off) |
| Test Condition | 1360V, 10A, 10Ohm, 15V |
| Gate Charge | 65 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 150 W |
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