IXBA16N170AHV
REVERSE CONDUCTING IGBTManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXBA16N170AHV is a high-voltage, reverse-conducting IGBT from the BIMOSFET™ series. This surface-mount component, packaged in a TO-263HV (TO-263-3, D2PAK), offers a 1700 V collector-emitter breakdown voltage and a continuous collector current of 16 A, with a pulsed capability of 40 A. It features a maximum power dissipation of 150 W and a low on-state voltage of 6 V at 15 V gate-emitter voltage and 10 A collector current. With a typical gate charge of 65 nC, the IXBA16N170AHV provides fast switching characteristics, with turn-on delay at 15 ns and turn-off delay at 250 ns under specified test conditions. The device exhibits a reverse recovery time of 25 ns and a switching energy of 2.5 mJ (off). Operating across an extended temperature range of -55°C to 150°C, this IGBT is suitable for applications in power factor correction, electric vehicle charging, and industrial motor drives where high voltage and efficient switching are critical.
Additional Information
Series: BIMOSFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 10A |
| Supplier Device Package | TO-263HV |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/250ns |
| Switching Energy | 2.5mJ (off) |
| Test Condition | 1360V, 10A, 10Ohm, 15V |
| Gate Charge | 65 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 150 W |
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