IXA70R1200NA
DISC IGBT XPT-GENX3 SOT-227B(MINManufacturer: IXYS
Categories: Single IGBTs
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The IXYS XPT™ IXA70R1200NA is a Disc IGBT designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 100 A, with a maximum power dissipation of 350 W. The PT IGBT type and standard input type are suitable for demanding switching applications. Key parameters include a gate charge of 190 nC and a Vce(on) of 2.1 V at 15 V Vge and 50 A Ic. Switching energy is rated at 4.5 mJ (on) and 5.5 mJ (off) under test conditions of 600 V, 50 A, 15 Ohm, and 15 V. The IXA70R1200NA is housed in a SOT-227B (miniBLOC) package, designed for chassis mounting. This component is commonly utilized in industrial motor drives, power supplies, and solar inverters.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 70ns/250ns |
| Switching Energy | 4.5mJ (on), 5.5mJ (off) |
| Test Condition | 600V, 50A, 15Ohm, 15V |
| Gate Charge | 190 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 350 W |
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